This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil? protection usually necessary in typical converters for lamp ballast.
High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
| 屬性 | 數值 |
|---|---|
| 晶體管類型 | NPN |
| 最大直流集電極電流 | 8 A |
| 最大集電極-發射極電壓 | 450 V |
| 封裝類型 | TO-220FP |
| 安裝類型 | 通孔 |
| 最大功率耗散 | 70 W |
| 晶體管配置 | 單 |
| 最大發射極-基極電壓 | 12 V |
| 引腳數目 | 3 |
| 每片芯片元件數目 | 1 |
